Far - infrared modulated photoluminescence spectroscopy of InSb Õ GaSb quantum dot structures
نویسندگان
چکیده
The first far-infrared modulated photoluminescence ~FIRM-PL! measurements in InSb/GaSb quantum dots have been performed. Far-infrared absorption is found to both enhance and suppress the quantum dot PL depending on the FIR intensity. This behavior is attributed to the nonthermal distribution of carriers amongst the quantum dots. The spectral dependence of the FIRM-PL signal measures the energy spectrum of the quantum dots, showing a peak at 14.5 meV corresponding to transitions between the first two energy levels of the dot distribution.
منابع مشابه
InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers
Type II InSb/InAs quantum dots (QDs) were successfully grown on GaAs substrates using three different metamorphic buffer layer (MBL) designs. The structural properties of the resulting metamorphic InAs buffer layers were studied and compared using cross-sectional transmission electron microscopy and high resolution x-ray diffraction measurements. Photoluminescence (PL) originating from the InSb...
متن کاملSelf-assembled InSb and GaSb quantum dots on GaAs(001)
Quantum dots of InSb and GaSb were grown on GaAs~001! by molecular-beam epitaxy. In situ scanning tunneling microscopy measurements taken after 1–2 monolayers of InSb or GaSb growth reveal the surface is a network of anisotropic ribbon-like platelets. These platelets are a precursor to quantum dot growth. Transmission electron microscopy measurements indicate that the quantum dots are coherentl...
متن کاملpH Effect on the Size of Graphene Quantum dot Synthesized by Using Pulse Laser Irradiation
In this study graphene oxide (GO) was synthesized by using Hummer’s method. Low dimension graphene quantum dot nanoparticles (GQDs) were synthesized using pulse laser irradiation. Fourier Transform-Infrared Spectroscopy (FTIR), Ultraviolet-Visible (UV-Vis) spectroscopy and photoluminescence (PL) analysis were applied to study the GQDs characteristic. Scanning electron microscopy illustrated the...
متن کاملThe structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate
We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.7...
متن کاملThe formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy
We report the direct deposition of indium antimonide, by molecular beam epitaxy (MBE) on gallium antimonide, resulting in the formation of quantum dots (QDs) with a maximum density of 5.3 10 cm . Using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) for the analysis of samples with InSb depositions of 1–6 ML equivalent thickness, we observe an apparent valu...
متن کامل